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       +125 O C TSTG Symbol Min Typ Max Unit Parameter Conditions Forward voltage IF = 1 0mA IF = 1 00mA VF V 0.34 0.55 Reverse current Capacitance between terminals VR = 1 0V f = 1 MHz, and 10 VDC reverse voltage IR CT uA pF 6 30 CDBER0140L-HF SMD Schottky Barrier Diode QW-G1031 5 O C unless otherwise noted) Maximum Rating (at TA=2 5 O C unless otherwise noted) Electrical Characteristics (at TA=2 Page 1 n Typ Max Unit IO VR VRRM Average forward rectified current Reverse voltage Repetitive Peak reverse voltage Forward current,surge peak Symbol Mi Parameter Conditions V V mA 100 40 45 Tj Storage temperature Junction temperature O C +125 -40 IFSM 8.3 ms single half sine-wave superimposed on rate load (JEDEC method) 1 A REV:B 0.053(1.35) 0.045(1.15) 0.034(0.85) 0.026(0.65) 0.030(0.75) 0.024(0.60) Dimensions in inches and (millimeter) 0.022(0.55) Typ. 0.016(0.40) Typ. Comchip Technology CO., LTD. Features - Low forward voltage. - Designed for mounting on small surface. - Extremely thin/leadless package. - Majority carrier conduction. Mechanical data - Case: 0503/SOD-723F standard package, m olded plastic. - Terminals: Gold plated, solderable per M IL-STD-750,method 2026. - Marking code: cathode band & B8 - Mounting position: Any - Weight: 0.002 gram(approx.). Io = 1 00 mA VR = 4 0 Volts RoHS Device Halogen Free 0503/SOD-723F |